2N3020 DATASHEET PDF
2N DC Current Gain. *hFE. IC=mA, VCE=10V. 30 – IC=10mA, VCE= . It is recommended that you completely review our Data Sheet(s) so as to. 2N datasheet, 2N circuit, 2N data sheet: MICRO-ELECTRONICS – NPN SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES,alldatasheet. 2N Transistor Datasheet pdf, 2N Equivalent. Parameters and Characteristics.
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Teruya Avalanche transistor selection for long-term stability in streak camera sweep and pulser applications, 5 September http: However transistors were avalanched long before this, as earlier papers below reveal. Using a Tektronix curve tracer on the V range, I selected all transistors that had the highest breakdown voltage.
Note – I have not bought from this source. Vcbo as high as possible fewer devices: Unfortunately, like all earlier transistors, the edge of the collector-base junction was exposed, making it sensitive to leakage through surface contaminants, thus requiring hermetic seals or passivation to prevent degradation of the transistor’s characteristics over time.
TO is aka SOT54; manufacturer known only where stated abbreviations: High current handling 5. I found paper [A22] only after writing all of this up. Data are collected from each run and stored.
Of the three transistors selected in paper A7, only the 2N is readily available in Makers of the Microchip: Woolston This excellent paper explores multiple Q-switch design topologies. Pinout best suited for low C, L R – T R ansistor selection criteria for avalanche.
An emitter layer in the base layer is of thickness about six-tenths the thickness of the base layer. For a pockels driver requiring something in the order of a 3. The Zetexes are made in Russia, presumably on an old fab line.
Frequency at least MHz 7. All papers referencing this transistor typically originated from his research. Stability on all types has been improved by power burn-in.
Transistor selection – best transistor types for avalanche.
Also contains many other topics of interest http: Data runs were dtaasheet 3 to 4 months long, with readings taken weekly. Older diffused-junction types sometimes do. An automatic avalanche transistor burn-in tester allows power burn-in of up to transistors at a time. Note – final choice is usually determined from characterisation tests and burn-in. The electric field causes migration of material in the high field region at the surface near the collector-base junction, creating the voltage instability.
Teruya Avalanche transistor selection for long-term stability in streak camera sweep and pulser applications, 5 September I assume the reason for suggesting older devices are better, into which I read: Selection of avalanche transistors for the LHC Project.
I intend to run more tests and measurements based on this paper. Asian sources of cheap Zetex avalanche transistors pedigree unknown. Instrum Vol 64, No.
2N datasheet, Pinout ,application circuits NPN SILICON PLANAR TRANSISTOR
A base layer in the surface of the epitaxial layer is of thickness about one-fourth the thickness of the epitaxial layer. Vcbo close to Vceo Kuthi, USA Sept As with the authors of most papers, I have gone the route of selecting ordinary low cost transistors.
Fast and RF transistors tend to work as well. Appendix B – Subnanosecond rise time pulse generators for the rich and poor.
2N3020 Datasheet, Equivalent, Cross Reference Search
A Documentary History of Fairchild Semiconductor. Williams, 9 October Vcbo being close to Vceo’ http: I determined the breakdown voltage with the aid of a Tektronix curve tracer, see bottom of this page for further details. Potential source of low cost ZTX avalanche transistors: Motorola, Zetex and National transistors were operated at datashwet pA [sic], and the Raytheon units were operated at 20 pA.
Larkin, Highland Technology Inc.